Fan Ren

1.            "Model Reduction and Control System Design via Block Pulse Functions," Shih, Y. P., Hwang, C., and Ren, F., J. Chinese Inst. of Chem. Eng., 11, 153 (1980).

2.            "Parameter Identification of Bilinear Systems by Block Pulse Functions", Ren, F., Shih, Y. P., Pei, S. C., and Guo, T., J. Chinese Inst. of Eng., 6, 39 (1983).

3.            "Hydrogen Bonding in Polymer Mixtures", Kwei, T. K., Pearce, E. M., Ren, F., and Chen, J. P., J. Polymer. Sci., 24, 1597 (1986).

4.            "Hydrogenation of GaAs on Si: Effect on Diode Reverse Leakage Current," Pearton, S. J., Wu, C. S., Stavola, D., Ren, F., Lopata, J., Dautremont-Smith, W. S., Vernon, S. M., and Haven, V. E., Appl. Phys. Lett., 51, 469 (1987).

5.            "Ion Implantation and Activation Behavior of Si in MBE-Grown GaAs on Si Substrates for GaAs MESFET's" Chand,N., Ren, F., Pearton, S. J., Shah, N. J., and. Cho, A. Y., , IEEE Elec. Dev. Lett.,EDL 8, 185 (1987)."Electrical and Structural Characterization of Highly Perfect Semi-insulating InGaAs Grown by Molecular Beam Epitaxy," Macrander, S. J. Hsieh, F. Ren and J. S. Patel, Crys. Growth , 23, 227-235(1988).

6.            "GaAs MESFET's, Ring Oscillators and Divide-by-2 Integrated Circuits Fabricated on MBE Grown GaAs on Si Substrates," F. Ren, N. Chand, P. Garbinski, S. J. Pearton, C. S. Wu, L. D. Urbanek, T. Fullowan and N. Shah, Electron. Lett., vol. 24, 1037, (1988).

7.            "Growth of Device Quality GaAs by Chemical Beam Epitaxy," H. Chiu, W. T. Tsang, J. A. Ditzenberger, C. W. Tu, F. Ren and C. S. Wu, , J. Electron. Mat., 17, 217 (1988).

8.            "Material Properties of GaAs-on-Si and Fabrication of Digital Integrated Circuits", Chand, N., Ren, F., Chu, S. N. G., Sergent, A. M., Boone, T., and Lang, D. V, Mat. Res. Soc. Symp. Proc., 116, 205 (1988).

9.            Molecular-Beam Epitaxy," J. Kuo, T. Y., Cunningham, J. E., Schubert, E. F., Tsang, W. T., Chiu, T. H., Ren, F., and Fonstad, C. G., J. Appl. Phys., 64, 3324 (1988).

10.        "Effects of Atomic Hydrogen Incorporation in GaAs-on-Si," J.M. Zavada, S.J. Pearton, R.G. Wilson, C.S. Wu, M. Stavola, F. Ren, J. Lopata and W.C. Dautremont-Smith, Journal of Applied Physics 65, 347-349 (1989).

11.        "Thermal Stability of Tungsten Ohmic Contacts to the Graded-Gap InGaAs/GaAs/AlGaAs Heterostructure," Lahav, A., Ren, F., and Kopf, R. F., Appl. Phys. Lett., 54, 1693 (1989).

12.        "Processing Method for the Fabrication of sub-0.25 µm GaAs Heterostructure Devices and Circuits", Resnick, D. J., Ren, F., Tennant, D. M., and Kopf, R. F., SPIE Prec., 1089, 103 (1989).

13.        "Material and Device Properties of 3" Diameter GaAs-on-Si with Buried p-type Layers," S.J. Pearton, K.M. Lee, N.M. Haegel, C.J. Huang, S. Nakahara, F. Ren, V.J. Scarpelli and K.T. Short, Material  Science and Engineering B. 3, 293-296 (1989).

14.        "High Performance AlGaAs/GaAs SDHTs and Ring Oscillators Grown by MBE on Si," F. Ren, N. Chang, Y.K. Chen, S.J. Pearton, D.M. Tennant and D.J. Resnik, IEEEE Electronic Device Letters 10, 559-561 (1989).

15.        "Ultra-High Doping of GaAs by Carbon During MOMBE," C.R. Abernathy, S.J. Pearton, R. Caruso, F. Ren and J. Kovalchick, Applied Physics Letters 55, 1750-1752 (1989).

16.        "GaAs heterostructure FET frequency dividers fabricated with high-yield 0.5 µm direct-write trilevel-gate-resist," F. Ren, Resnick, D. J., Atwood, D. K., Tu, C. W., Kopf, R. F., and Shah, N.J.,  Electron. Lett., 25, 1631 (1989).

17.        "High Performance AlGaAs/GaAs SDHT's and Ring Oscillators Grown by MBE on Si Substrates," Ren, F., Chand, N., Chen, Pearton, S. J., Tennant, D. M., and Resnick, D.,  IEEE Elec. Dev. Lett., EDL 10, 559 (1989).

18.        "Partially-doped GaAs SQW FET," F. Ren, C.W. Tu, R.F. Kopf, C.S. Wu, A. Chandia and S.J. Pearton, Electronic Letters 25, 1675-1676 (1989).

19.        "Performance of GaAs MESFETS on InP Substrates," F. Ren, W.S. Hobson, S.J. Pearton, L.J. Oster and P.R. Smith, IEEE Electronic Device Letters 10, 389-391 (1989).

20.        “Temperature Dependence of Current Conduction in Barrier-Enhanced, Carbon Delta-Doped GaAs Diodes.” A. Katz, S.J. Pearton, F. Ren and C.R. Abernathy, Journal of Vacuum Science & Technology B Vol. 8, No. 6, 1270-1273 (1990)

21.        "Carbon and Zinc Delta-Doping for Schottky Barrier Enhancement on a-type GaAs," S.J. Pearton, F. Ren, C.R. Abernathy, W.S. Hobson, S.N.G. Chu and J. Kovalchick, Applied Physics Letters 55, 1342-1344 (1989).

22.        “Schottky Barrier Enhancement on n-Type GaAs by As Implantation” C.S. Wu, C.S. Pai, S.J. Pearton, F. Ren, E.Lane and D.M. Schleich. Sub. Class: 73.30; S7.12 (1990)

23.        "Carbon-doped Base GaAs-AlGaAs HBTs Grown by MO-MBE and MO-CVD Regrowth," W.S. Hobson, F. Ren, C.R. Abernathy, S.J. Pearton, T.R. Fullowan and J. Lothian, IEEE Electronic Device Letters 11, 241-243 (1990).

24.        "Implant Isolation of GaAs-AlGaAs HBT Structures," F. Ren, S.J. Pearton, W.S. Hobson, T.R. Fullowan, J. Lothian and A.W. Yanof, Applied Physics Letters 56, 860-862 (1990).

25.        "Carbon Doping of III-V Compounds Grown by MOMBE," C.R. Abernathy, S.J. Pearton, F. Ren and W.S. Hobson, Houston, Dec. 1989: Journal of Crystal Growth, 105, 375-381 (1990).

26.        "GaAs on Si: Improved MBE Growth Conditions, Properties of Undoped GaAs,  High 2DEG mobility, and Fabrication of High Performance AlGaAs/GaAs SDHT's and Ring Oscillators," Chand, N., Ren, F., and Macrander, A. T., J. Appl. Phys. 67, 2343 (1990).

27.        "Epitaxial growth of n⁺, p⁺-n GaAs metal-semiconductor field-effect transistor structures using tertrabutylarsine,"Lum, R. M., Klingert, J. K., Ren, F., and Shah, N. J., Appl. Phys. Lett., 56, 379 (1990).

28.        Growth and properties of  Semi-Insulating InP using Multi-Frit Trichloride Vapor Phase Epitaxy (MTVPE) K.W. Wang, V.D. Mattera, F. Ren, D. Zolnowski, J.N. Hollenhorst, and D.N. Buckley. Journal of The Electrochemical Society; Vol 138 No.9 (1991)

29.        "GaAs/AlGaAs QW and Modulation-doped Heterostructures Grown by OMVPE using TMAA1," W.S. Hobson, F. Ren, S. Sputz, T. Harris, C.R. Abernathy, S.J. Pearton and K.S. Jones, Applied Physics Letters 59, 1975-1977 (1991).

30.        "Carbon and Tin Doped npn and pnp AlGaAs/GaAs HBTs Grown by MOMBE," F. Ren, C.R. Abernathy, S.J. Pearton, T. Fullowan, J. Lothian, P. Wisk, Y.K. Chen, W.S. Hobson and P. Smith, Electronics Letters 27, 2391-2393 (1991).

31.        "Stability of C and Be-doped Base GaAs/AlGaAs HBTs," F. Ren, T. Fullowan, J. Lothian, P. Wisk, C.R. Abernathy, R. Kopf, S. Downey and S.J. Pearton, Applied Physics Letters 59, 3613-3615 (1991).

32.        "Dopant Passivation in AlInAs and InGaP by Atomic Deuterium," S.J. Pearton, J. Kuo, W.S. Hobson, F. Ren, M. Geva and A. Katz, Applied Physics Letters 59, 2703-2705 (1991).

33.        "Characteristics of Be⁺ and O⁺ co-implantation in GaAs/AlGaAs HBTs," S.J. Pearton, F. Ren, P. Wisk, T. Fullowan, R. Kopf, J. Kuo, W.S. Hobson and C.R. Abernathy, Journal of Applied Physics 69, 698-703 (1991).

34.        "The Feasibility of Using TMAA1 as an Al Precursor for MOMBE," C.R. Abernathy, A. Jordan, S.J. Pearton, F. Ren, F. Baiocchi, D. Bohling and G. Muhr, Journal of Crystal Growth 109, 31-36 (1991).

35.        "GaAs-AlGaAs HBT with Carbon-Doped Base Grown by MOMBE," F. Ren, C.R. Abernathy, S.J. Pearton, T.R. Fullowan, J. Lothian and A.S. Jordan, Electron Letters 26, 724-725 (1990).

36.        "Use of UV/Ozone Cleaning to Remove C and O from GaAs Prior to MOMBE and MOCVD," S.J. Pearton, F. Ren, C.R. Abernathy, W.S. Hobson and H.S. Luftman, Applied Physics Letters 58, 416-418 (1991).

37.        "Improved n-type GaAs Ohmic Contacts Compatible with a Cl-based Dry-etch Process," F. Ren, T.R. Fullowan, S.J. Pearton, W.S. Hobson and H.B. Emerson, Journal of Electronic Materials 20, 305-308 (1991).

38.        "Novel C-doped p-channel MESFET Grown by MOMBE," F. Ren, C.R. Abernathy and S.J. Pearton, Journal of Applied Physics 70, 2885-2889 (1991).

39.        "Improvement of Ohmic Contacts on GaAs with in-situ Cleaning," F. Ren, A.B. Emerson, S.J. Pearton, R.T. Fullowan and J.M. Brown, Applied Physics Letters 58, 1030-1032 (1991).

40.        "Improved Breakdown of AlInAs/InGaAs HBTs," T.R. Fullowan, S.J. Pearton, R.F. Kopf, Y. Chen, M. Chin and F. Ren, Electronics Letters 27, 2340-2341 (1991).

41.        “In-based p-ohmic Contacts to the Base Layer of AlGaAs/GaAs HBT," F. Ren, S.J. Pearton, W.S. Hobson, T.R. Fullowan and A.B. Emerson, Applied Physics Letters 58, 1158-1160 (1991).

42.        "Sn Doping of GaAs and AlGaAs by MOMBE Using Tetraethyltin," C.R. Abernathy, S.J. Pearton, F. Ren and J. Song, Journal of Crystal Growth 113, 412-415 (1991).

43.        "Sidewall Roughness During Dry Etching of InP," U.K. Chakrabarti, S.J. Pearton and F. Ren, Semiconductor Science and Technology 6, 308-310 (1991).

44.        Gbit/High Sensitivity, Low Error Rate Decision Circuit Implemented with C-doped AlGaAs/GaAs HBTs," R.K. Montgomery, P. Smith, F. Ren, T.R. Fullowan, C.R. Abernathy, P. Kopf, S.J. Pearton, J. Lothian, P. Wisk and R.N. Nottenburg, Electron Letters 29, 976-977 (1991).

45.        "Ion Implantation Doping and Isolation of InGaP," S.J. Pearton, J. Kuo, F. Ren, A. Katz and A. Perley, Applied Physics Letters 59, 1467-1469 (1991).

46.        "Dry Etch Processing of GaAs/AlGaAs HEMT Structures," S.J. Pearton, F. Ren, J. Lothian, T. Fullowan and U. Chakrabarti, Journal of Vacuum Science and Technology 9, 2487-2492 (1991).

47.        "AlGaAs/GaAs HEMTs, Inverters and Ring Oscillators with InGaAs and AlGaAs Etch Stop Layers," F. Ren, S.J. Pearton, R. Kopf, S. Chu and S. Pei, Electronics Letters 27, 1175-1176 (1991).

48.        “10 Gbit/s AlGaAs/GaAs HBT Driver IC For Lasers or Lightwave Modulators," R. Montgomery, F. Ren, C.R. Abernathy, T. Fullowan, R. Kopf, P. Smith, S.J. Pearton, P. Wisk, J. Lothian and R. Nottenburg,  Electronics Letters 27, 1827-1828 (1991).

49.        "Self-Aligned AlGaAs/GaAs HBT Grown by MOMBE," F. Ren, T. Fullowan, C.R. Abernathy, S.J. Pearton, P. Smith, R. Kopf and E.J. Laskowski, Electronic Letters 27, 1054-1055 (1991).

50.        "Growth and Dry Etch Processing of MOMBE GaAs p-n Junctions," S.J. Pearton, F. Ren, C.R. Abernathy, T.R. Fullowan and J. Lothian, Semiconductor Science and Technology 6, 1049-1052 (1991).

51.        "Dry Etching and Implant Isolation Characteristics of AlGaAs Grown by MOMBE," S.J. Pearton, C.R. Abernathy, F. Ren and T.R. Fullowan, Semiconductor Science and Technology 1042-1047 (1991).

52.        "Use of Pt Metallization of Reduce Leakage Currents in GaAs MESFETs," F. Ren, T.R. Fullowan, A.B. Emerson, W.S. Hobson and S.J. Pearton, Journal of Electronic Materials 20, 595-599 (1991).

53.        "Small Area InGaP Emitter, Carbon-Doped Base HBTs Grown by MOMBE," F. Ren, C.R. Abernathy, S.J. Pearton, J. Lothian, S. Chu, P. Wisk, T. Fullowan, B. Tseng and Y.K. Chen, Electronics Letters 28, 2250-2251 (1992).

54.        "Anisotropic Dry Etching of Submicron W. Features Using a Ti Mask," T. Fullowan, S.J. Pearton, F. Ren, G. Mahoney and R. Kostelak, Semiconductor Science and Technology 7, 1489-1493 (1992).

55.        "Alternative Group V Sources for Growth of GaAs and AlGaAs by MOMBE," C.R. Abernathy, P. Wisk, S.J. Pearton, F. Ren, D.A. Bohling and G. Muhr, Journal of Crystal Growth 124, 664-669 (1992).

56.        "Hydrogen Incorporation into GaAs, InP and Related Compounds During Epitaxial Growth and Device Processing," S.J. Pearton, C.R. Abernathy, W.S. Hobson, F. Ren, T. Fullowan, U. Chakrabarti, M. Stavola and D. Kozuch, Materials Science and Engineering B 13, 171-176 (1992).

57.        "InGaP/GaAs Single-and Double-Heterojunction Bipolar Transistors Grown by Organometallic Vapor Phase Epitaxy", Hobson, W. S., Ren, F., Lothian, J. R., and Pearton, S. J., Semi. Sci. and Tech., 7, 598-603 (1992).

58.        "InGaP/GaAs Based Single and Double Heterojunction Bipolar Transistors Grown by MOMBE", Ren, F., Abernathy, C. R., Pearton, S. J., Wisk, P. W., and Esagui, R., Electronics Letters, 28, 1150-1152 (1992).

59.        "Mg Doping of InP and InGaAs grown by Metal Organic Molecular Beam Epitaxy Using Bis-cyclopentadienylmagnesium", Abernathy, C. R., Wisk, P. W., Pearton, S. J., and Ren, F., Appl. Phys. Lett., 62, 258 (1992).

60.        "Reduction of Sidewall Roughness During Dry Etching of SiO₂", Ren, F., Pearton, S. J., Lothian, J. R., Abernathy, C. R., and Hobson, W. S.,J. of Vac. Sci. & Tech. B 10, 2407-2411 (1992).

61.        "Hydrogen iodide-based dry etching of GaAs, InP and related compounds, Pearton, S. J., Chakrabarti, D. K., Hobson, W. S., Abernathy, C. R., Katz, A., Ren, F., Fullowan T. R., and Perley, A/ P., J. Electrochem. Soc. 139, 1763-1768 (1992).

62.        "Use of MeV O⁺ Ion Implantation for Isolation of GaAs/Al GaAs HBTs," S.J. Pearton, F. Ren, J. Lothian, T. Fullowan, A. Katz, P. Wisk, C. Abernathy, R. Kopf, R. Elliman, M. Ridgway, C. Jagadish and J. Williams, Journal of Applied Physics 71, 4949-4953 (1992).

63.        "New, High-Rate Dry Etch Mixture for InP-Based Heterostructures", Pearton, S. J., Chakrabarti, U. K., Coblentz, C., Ren, F., Fullowan, T. R., and Katz, A., Electronics Lett., 28, 448-449 (1992).

64.        "ECR Plasma Etching of CVD Diamond Thin Films", Pearton, S. J., Katz, A., Ren F., and Lothian, J. R., Electronics Lett. 28, 822-823 (1992).

65.        "Dry Etching of Submicron Gratings for InP Laser Structures - Comparison of HI/H₂, CH₄/H₂ and C₂H₆/ H₂ PlasmaChemistries", Pearton, S. J., Ren, F., Hobson, S. W., Green, C., and Chakrabarti, U. K., Semicond. Sci. Technol., 7, 1217-1222 (1992).

66.        "Operation of a Fully Integrated GaAs/Al_xGa_1-xAs FET-SEED:  A Basic Optically Addressed Integrated Circuit", Woodward, T. K., Chirovsky, L. M. F., Lentine, A. L., D'Asaro, L. A., Laskowski, E.J., Pei, S. S., Ren, F., Przybylek, G. J., Smith, L. E., Focht, M. W., Guth, G. D., Asom, M. T., Kopf, R. F., Kuo, J. M., and Feuer, M. D., IEEE Photonics Technology Letters, 4, 614-616 (1992).

67.        "Batch Fabrication and Structure of Integrated GaAs-Al_xGa_1-xAs Field Effect Transistor-Self Electro-optic Effect Devices (FET-SEEDs)", D'Asaro, L. A., Chirovsky, L. M. F., Laskowski, E. J., Pei, S. S., Leibenguth, R. E., Woodard, T. K., Focht, M., Lentine, A. L., Asom, M. T., Guth, G., Kopf, R. F., Kuo, J. M., Pearton, S. J., Przybylek, G. J., Ren F., and Smith, L. E., IEEE Electron Device Letters, 13, 528-530 (1992).

68.        "Dopant Incorporation in GaAs and AlGaAs Grown by MOMBE for High Speed Devices,” C.R. Abernathy, F. Ren, S.J. Pearton and J. Song, Journal of Electronic Materials 21, 323-327(1992).

69.        "The Effect of ECR Generated H₂ Plasma on Growth of GaAs and AlGaAs by MOMBE," C.R. Abernathy, P. Wisk, S.J. Pearton  and F. Ren, Journal of Vacuum Science and Technology B 10, 2153-2158(1992).

70.        "Mask Erosion During Dry Etching of Deep Features in III-V Semiconductor Structures," J. Lothian, F. Ren and S.J. Pearton, Semiconductor Science and Technology 7, 1199-1205 (1992).

71.        "Tri-Layer Lift-Off Metallization Process Using Low-Temperature Deposited SiN_x," J. Lothian, F. Ren, S.J. Pearton, U.K. Chakrabarti, C.R. Abernathy and A. Katz, Journal of Vacuum Science and Technology B 10, 2361-2365 (1992).

72.        "Dry Etching Bilayer and Trilevel Resist Systems for Submicron Gate Length GaAs-Based HEMTs for Power and Digital Applications," F. Ren, S.J. Pearton, D. Tennant, D. Resnik, C.R. Abernathy, R. Kopf, C. Wu, M. Hu, C. Pai, B. Paine, D.C. Want  and C.P. Wen, Journal of Vacuum Science and Technology B. 10, 2949-2955 (1992).

73.        "New High Rate Dry Etch Mixture for InP-Based Heterostructure," S.J. Pearton, U. Chakrabarti, D. Coblentz, F. Ren, T.R. Fullowan and A. Katz, Electronic Letters 28, 448-449 (1992).

74.        "Microwave Cl₂/H₂ Discharges for High Rate Etching of InP," C. Constantine, C. Barratt, S.J. Pearton, F. Ren and J. Lothian, Electronics Letters 28, 1749-1750 (1992).

75.        "Dry Etching of Submicron Gratings for InP Laser Structures - Comparison of HI/H₂, CH₂/H₂ and C₂H₆/H₂ Plasma Chemistries," S.J. Pearton, F. Ren, W.S. Hobson, C. Green and U.K. Chakrabarti, Semiconductor Science and Technology 7, 1217-1219 (1992).

76.        “Pseudomorphic HEMTs Processed with Damage-Free Dry Etch Gate Recess Technology," F. Ren, S.J. Pearton, C.R. Abernathy, C.S. Wu, M. Hu, C.K. Pao, D.C. Wang and C.P. Wen, IEEE Electronic Devices 39, 2701-2707 (1992).

77.        "Smooth Low-Bias Plasma Etching of InP in Microwave Cl₂/CH₄/H₂ Mixtures," C. Constantine, C. Barratt, S.J. Pearton, F. Ren and J. Lothian, Applied Physics Letters 61, 2899-2901 (1992).

78.        "Self-Aligned Metal-Masked Dry Etch Processing of III-V Electronic and Photonic Devices," S.J. Pearton, A. Katz, A. Feingold, F. Ren, T.R. Fullowan, J. Lothian and C.R. Abernathy, Materials Science and Engineering B. 15, 82-89 (1992).

79.        "Damage Introduction in InP and InGaAs During Ar and H₂ Plasma Exposure," S.J. Pearton, F. Ren, C.R. Abernathy, W.S. Hobson, R. Rullowan, R. Esaqui and J. Lothian, Applied Physics Letters 61, 586-588 (1992).

80.        "III-V Semiconductor Device Dry Etching Using ECR Discharges," S.J. Pearton, F. Ren, T. Fullowan, T. Lothian, A. Katz, R. Kopf and C.R. Abernathy, Plasma Sources: Science and Technology 1, 18-29 (1992).

81.        "Single Energy MeV Implant Isolation of Multilayer III-V Device Structures," R. Elliman, M. Ridgway, C. Jagadish, S.J. Pearton, F. Ren, J. Lothian, T. Fullowan, A. Katz, C.R. Abernathy and R. Kopf, Journal of Applied Physics 71, 1010-1015 (1992).

82.        "Growth of pnp HBT Structures by MOMBE," C.R. Abernathy, F. Ren, S.J. Pearton, T.R. Fullowan, P. Wisk and J. Lothian, Journal of Applied Physics 71, 1219-1225 (1992).

83.        "Ohmic Contacts to n-type InGaP," F. Ren, J. Kuo, S.J. Pearton and T.R. Fullowan, Journal of Electronic Materials 21, 243-247 (1992).

84.        "Growth of GaAs/AlGaAs HBTs by MOMBE," C.R. Abernathy, F. Ren, S.J. Pearton, T. Fullowan, R. Montgomery and P. Wisk, Journal of Crystal Growth 120, 234-241 (1992).

85.        "Rapid Isothermal Processing for Fabrication of GaAs Based Electronic Devices," S.J. Pearton, F. Ren, A. Katz, T.R. Fullowan, C.R. Abernathy, W.S. Hobson and R.F. Kopf, IEEE Electronic Devices 39, 154-160 (1992).

86.        "Carbon-doped MESFET Grown by MOMBE," F. Ren, C.R. Abernathy and S.J. Pearton, Materials Science and Engineering B. 13, 305-307 (1992).

87.        "Improved Performance of C-doped GaAs Based HBTs Through Use of InGaP," C.R. Abernathy, F. Ren, P. Wisk, S.J. Pearton and R. Esqui, Applied Physics Letters 61, 1092-1094 (1992).

88.        "Thermal Stability of GaAs(C)/InAs Superlattices Grown by MOMBE," C.R. Abernathy, P. Wisk, S.J. Pearton, W. Hobson, P. Fuoss, F. Lamelas, S.N.G. Chu and F. Ren, Applied Physics Letters 60, 1339-1341 (1992).

89.        "Activation and Diffusion Characteristics of Implanted Si and Be in AlInP," S.J. Pearton, W.S. Hobson, J.M. Kuo, H. Luftman, A. Katz and F. Ren, Applied Physics Letters 60, 1117-1119 (1992).

90.        "High-rate Anisotropic Dry Etching of InP in HI-based Discharges," S.J. Pearton, U.K. Chakrabarti, A. Katz, F. Ren and T. Fullowan, Applied Physics Letters 60, 838-840 (1992).

91.        "InGaP/GaAs Single and Double HBTs Grown by OMVPE," W.S. Hobson, F. Ren, J. Lothian and S.J. Pearton, Semiconductor Science and Technology 7, 590-594 (1992).

92.        "AlGaAs/GaAs HBTs Grown on InP by OMVPE," W.S. Hobson, F. Ren, S.J. Pearton, T. Fullowan, E. Laskowski and Y.K. Chen, Semiconductor Science and Technology 7, 595-637 (1992).

93.        "Wet and Dry Etching Characteristics of AlInP," J. Lothian, J. Kuo, W.S. Hobson, E. Lane, F. Ren and S.J. Pearton, Journal of Vacuum Science and Technology B. 10, 1061-1065 (1992).

94.        "InGaP/GaAs Based HBTs Grown by MOMBE," F. Ren, C.R. Abernathy, S.J. Pearton, P. Wisk and R. Esqui, Electronics Letters 28, 1550-1551 (1992).

95.        "GaAs Via Hole Etching and MOMBE Regrowth, " F. Ren, S.J. Pearton, C.R. Abernathy, R. Esqui, T.R. Fullowan, P. Wisk and J. Lothian, Semiconductor Science and Technology 7 850-853 (1992).

96.        "Stability of InAs Contact Layers on GaAs/AlGaAs HBTs During Implant Isolation Annealing," F. Ren, S.N.G. Chu, C.R. Abernathy, T.R. Fullowan, J. Lothian and S.J. Pearton, Semiconductor Science and Technology 7, 793-797 (1992).

97.        "Plasma and Wet Chemical Etching of In_0.5Ga_0.5P," J.R. Lothian, J.M. Kuo, F. Ren and S.J. Pearton, Journal of Electronic Materials 21, 441-445 (1992).

98.        "Reduction of Sidewall Roughness During Dry Etching of SiO₂," F. Ren, S.J. Pearton, J. Lothian, C.R. Abernathy and W. Hobson, Journal of Vacuum Science and Technology B 10, 2407-2411 (1992).

99.        "Plasma Etching of III-V Semiconductor Thin Films," S.J. Pearton, F. Ren, T. Fullowan, A. Katz, W.S. Hobson, U.K. Chakrabarti and C.R. Abernathy, Materials Chemistry Physics 32, 215-229 (1992).

100.    “Comparison of intrinsic and extrinsic carbon doping sources for GaAs and AIGaAs grown by MOMBE.” C.R. Abernathy, S.J. Pearton, F. Ren, W.S. Hobson, and P.W. Wisk. Sci. Technol. pp. 1186-1190  (1994)

101.     "Selective Regrowth of InP and GaAs by OMVPE and MOMBE Around Dry Etched Features," W.S. Hobson, S.J. Pearton, C.R. Abernathy, F. Ren and J. Lothian, Journal of Vacuum Science and Technology B 11, 536-541 (1993).

102.    "Dry-Processed Through-Wafer Via Holes for GaAs Power Devices," S.J. Pearton, F. Ren, A. Katz, J.R. Lothian, T.R. Fullowan and B. Tseng, Journal of Vacuum Science and Technology B 11, 153-157 (1993).

103.    "Damage Introduction in GaAs/AlGaAs and InGaAs/InP HBT Structures During ECR Plasma Processing," F. Ren, T.R. Fullowan, S.J. Pearton, J.R. Lothian, R. Esqui, C.R. Abernathy and W.S. Hobson, Journal of Vacuum Science and Technology B. 11, 1768-1771 (1993).

104.    "Dry and Wet Etching Characteristics of InN, AlN and GaN Deposited by ECR-MOMBE," S.J. Pearton, C.R. Abernathy, F. Ren, J. Lothian, P. Wisk and A. Katz, Journal of Vacuum Science and Technology B. 11, 1772-1775 (1993).

105.    “Fabrication of Y-gate, Submicron Gte Length GaAs MESFETs,” F. Ren, S.J. Pearton, J.R. Lothian and C.R. Abernathy, Journal of Vacuum Science and Technology B 11, 2603-2607 (1993).

106.    "Y-gate Submicron Gate Length GaAs MESFETs," F. Ren, S.J. Pearton, J.R. Lothian and C.R. Abernathy, Journal of Vacuum Science and Technology B 11, 1850-1854 (1993).

107.    "The Effects of Ionizing Radiation on GaAs/AlGaAs and InGaAs/AlInAs HBTs," S. Witmer, S. Mittleman, D. Behy, F. Ren, T. Fullowan, R. Kopf. C.R. Abernathy, S.J. Pearton, D. Humphrey, R. Montgomery, P. Smith, J. Kreskovsky and H. Grubin, Materials Science and Engineering B 20, 280-290 (1993).

108.    "Reversible Changes in Doping of InGaAlN Alloys Induced by Ion Implantation or Hydrogenation," S.J. Pearton, C.R. Abernathy, P. Wisk, W. Hobson and F. Ren,  Applied Physics Letters 63, 1143-1145 (1993).

109.    "Ion Implantation and Dry Etching Characteristics of InGaAsP, (l=1.3 mm) " S.J. Pearton, C.R. Abernathy, P. Wisk and F. Ren, Journal of Applied Physics 74, 1610-1614 (1993).

110.    "Growth of InN of Ohmic Contact Formation by ECR-MOMBE," C.R. Abernathy, S.J. Pearton, F. Ren and P. Wisk, Journal of Vacuum Science and Technology B 11, 179-184 (1993).

111.    "Surface Recombination Velocities on Processed InGaP P-N Junctions," S.J. Pearton, F. Ren, W.S. Hobson, C.R. Abernathy, R.L. Masatis and U.K. Chakrabarti, Applied Physics Letters 63, 3610-3612 (1993).

112.    "Formation of Narrow, Dry-Etched Mesas for Long Wavelength InP-InGaAsP Lasers," F. Ren, S.J. Pearton, B. Tseng, J.R. Lothian, B. Segner and C. Constantine, Journal of Electrochemical Society  140, 3284-3289 (1993).

113.    "Enhanced Etch Rates of Tri-Level Resist Stacks in Microwave Discharges," S.J. Pearton, F. Ren and C.R. Abernathy, Semiconductor Science and Technology 8, 1905-1909 (1993).

114.    “SiN_x/Sulfide Passivated GaAs/AlGaAs Microdisk Lasers," W.S. Hobson, V. Mohideen, S.J. Pearton, R.E. Sluster and F. Ren, Electronics Letters 29, 2129-2130 (1993).

115.    "Defects and Ion Redistribution in Implant-Isolated GaAs-based Device Structures," S.J. Pearton, F. Ren, S. Chu., C.R. Abernathy, W.S. Hobson and R. Elliman, Journal of Applied Physics 74, 6580-6583 (1993).

116.    "Self-aligned InGaP/GaAs HBTs for Microwave Power Applications," F. Ren, C.R. Abernathy, S.J. Pearton, J. Lothian, P. Wisk, T. Fullowan, Y. Chen, L. Yang, S. Fu and H. Lin, IEEE Electronic Device Letters EDL 14, 332-334 (1993).

117.    "Dry Etching of Via Connections for InP Power Devices," C. Constantine, C. Barraff, S.J. Pearton, F. Ren, J. Lothian, W. Hobson, A. Katz, L. Yang and P.C. Chao, Electronics Letters 29, 984-985 (1993).

118.    "Optical Emission Spectroscopy of ECR Discharges for III-V Semiconductor Processing," S.J. Pearton, T. Keel, A. Katz and F. Ren, Semiconductor Science and Technology 8, 1889-1895 (1993).

119.    "Growth of InGaP by MOMBE Using Novel Ga Sources,” C.R. Abernathy, P. Wisk, F. Ren, S.J. Pearton, A. Jones and A. Rushworth , Journal of Applied Physics 73, 2283-2287 (1993).

120.    "Dry Surface Cleaning of Plasma-Etched HEMTs," S.J. Pearton, F. Ren, A. Katz, U. Chakrabarti, E. Lane, W. Hobson, R. Kopf, C.R. Abernathy, C.S. Wu, C. Bohling and J.C. Ivankovits, Journal of Vacuum Science and Technology B 11, 546-550 (1993).

121.    "Dry Etching of Thin Film InN, AlN and GaN," S.J. Pearton, C.R. Abernathy, F. Ren, J. Lothian, P. Wisk, A. Katz and C. Constantine, Semiconductor Science and Technology 8, 310-313 (1993).

122.    "The Role of the As Source in Selective Epitaxial Growth of GaAs and AlGa As by MOMBE," C.R. Abernathy, S.J. Pearton, F. Ren, P. Wisk, J. Lothian, D. Bohling and G. Muhr, Semiconductor Science and Technology 8, 979-984 (1993).

123.    "C-doped GaAs and AlGaAs by OMVPE: Doping Properties, O and H Incorporation and Device Applications," W.S. Hobson, S.J. Pearton, F. Ren, Y. Cheng, D. Kozuch and M. Stavola, Material Science and Engineering  B. 20, 266-270 (1993). L

124.    "Mg Doping of InP and InGaAs Grown by MOMBE using Dis-cyclopentadiemyl-magnesium," C.R. Abernathy, P. Wisk, S.J. Pearton and F. Ren,  Applied Physics Letters 62, 258-260 (1993).

125.    "Dry Etching Characteristics of III-V Semiconductors in Microwave BC1₃ Discharges," S.J. Pearton, W.S. Hobson, C.R. Abernathy, F. Ren, T.R. Fullowan, A. Katz and A. Perley, Plasma Chemistry and Plasma Processing 11, 311-330 (1993).

126.    "Plasma Etching of ZnS, ZnSe, CdS and CdTe in ECR CH₄/H₂/Ar and H₂/Ar Dis-charges,” S.J. Pearton and F. Ren, Journal of Vacuum Science and Technology B 11, 15-19 (1993).

127.    "Long Term Stability at 200°C of Implant-Isolated GaAs," F. Ren, S.J. Pearton, C.R. Abernathy, P. Wisk, T. Fullowan, J. Lothian and R. Esqui, Semiconductor Science and Technology 8, 413-416 (1993).

128.    "Low Bias Dry Etching of Tungsten and Dielectric Layers on GaAs," S.J. Pearton, F. Ren and C.R. Abernathy, Semiconductor Science and Technology 8, 1897-1903 (1993).

129.    "Fabrication of Self-aligned GaAs/AlGaAs and GaAs/InGaP Power HBTs," F. Ren, J. Lothian, S.J. Pearton, C.R. Abernathy, D. Wisk, Y. C.Chen, H. Lin and T. Henry, Journal of Vacuum Science and Technology B 12, 2916-2926 (1994).

130.     “Low Temperature Cl₂-based Dry Etching of III-V Semiconductors,” S.J. Pearton, C.R. Abernathy, R.F. Kopf and F. Ren, Journal of Electrochemical Society 141, 2250-2255 (1994).

131.    “Dry Etching and Implantation Characteristics of Al_0.5Ga_0.5P," S.J. Pearton, C.R Abernathy and F. Ren, Applied Physics Letters 64, 3015-3017 (1994).

132.    "Diffusion of H₂ in n-type Si," S.J. Pearton, Mat. Sci. Eng. B 23, 130-136 (1994)

133.    "Thermal Stability of Ti/Pt/Au Nonalloyed Ohmic Contacts on InN," F. Ren, C.R. Abernathy, S. J. Pearton and P. Wisk, Applied Physics Letters 64 1508-1510 (1994)

134.    "Low Bias Plasma Etching of GaN, AlN and InN," S.J. Pearton, C.R. Abernathy and F. Ren, Applied Physics Letters 64, 2294-2296 (1994)

135.    "Electrical Passivation in Hydrogen Plasma Exposed GaN," S.J. Pearton, C.R. Abernathy and F. Ren, Electronics Letters 30, 527-528 (1994)

136.    "Diffusion of H in Semiconductors and its Association with Defects," S.J. Pearton, C.R. Abernathy and F. Ren, Defect & Diffusion Forum 111/112, 1-36 (1994)

137.    "Science of Dry Etching of III-V Materials," S.J. Pearton and F. Ren, Journal of Materials Science:  Materials in Electronics 5, 1-11 (1994)

138.    "Comparison of Surface Recombination Velocities in InGaP and AlGaAs Mesa Diodes," S.J. Pearton, F. Ren, W.S. Hobson, C.R. Abernathy and V.K. Chakrabarti, Journal of Vacuum Science and Technology B 12, 142-145 (1994)

139.    "Fabrication of GaN Nanostructures by a Sidewall-Etchback Process," S.J. Pearton, F. Ren, C.R. Abernathy and J.R. Coblisan, Semiconductor Science and Technology 9, 338-340 (1994)

140.    "Low Temperature ECR Plasma Etching of GaAs, AlGaAs and GaSb in Cl₂/Ar," S.J. Pearton, F. Ren and C.R. Abernathy, Applied Physics Letters 64, 1673-1675 (1994)

141.    “Fabrication techniques for self-aligned GaAs-based HBTs and submicron gate length FETs”, Ren, F., Int. J. mod. Phys. B8, 2221 (1994).

142.    "GaAs/AlGaAs Microdisk Lasers," U. Mohideen, W.S. Hobson, S.J. Pearton, F. Ren and R.E. Slusher, Applied Physics Letters 64, 1911-1913 (1994).

143.    "Dry Etched Mesas for Buried Heterostructure InGaAsP/InP Lasers Using ECR CL₂/CH₄/H₂/Ar Discharges," S. J. Pearton, W. S. Hobson, F. Ren, C. R. Abernathy and C. Constantine, Journal of Materials Science: Materials in Electronics 5, 185-191 (1994) 

144.    "Comparison of Multipolar and Magnetic Mirror ECR Sources for CH₄/H₂ Dry Etching of III-V Semiconductors," S. J. Pearton, C. R. Abernathy, R. Kopf, F. Ren and W. S. Hobson, Journal of Vacuum Science and Technology B 12, 1333-1340 (1994)

145.    "Use of Sn-doped GaAs for Non-alloyed Ohmic Contacts to HEMTs," F. Ren, A. Y. Cho, D. L. Sivco, S. J. Pearton and C. R. Abernathy, Electronics Letters 30, 912-913 (1994).

146.    "Dry Etch Gate Recess High Breakdown Voltage Power HEMTs," C. S. Wu, F. Ren, S. J. Pearton, M. Hu, C. Rao and R. Wang, Electronics Letters 30, 1803-1805 (1994).

147.    "New Dry Etch Chemistries for III-V Semiconductors," S. J. Pearton, U. K. Chakrabarti, F. Ren, C. R. Abernathy, A. Katz, W. S. Hobson and C. Constantine, Materials Science and Engineering B 25, 179-189 (1994).

148.    "Dry Etched Mesas for Buried Heterostructure InGaAsP/InP Lasers Using ECR Cl₂/CH₂/H₂/Ar Discharges," S.J. Pearton, W.S. Hobson, F. Ren, C.R. Abernathy and C. Constantine, Journal of Materials Science: Materials in Electronics 5, 185-191 (1994).

149.    "Temperature Dependent Dry Etching Characteristics of III-V Semiconductors in HBr- and HI-based Discharges," S.J. Pearton, F. Ren and C.R. Abernathy, Plasma Chemistry and Plasma Processing 14, 131-143 (1994).

150.    "Dry Patterning of InGaN and InAlN," S. J. Pearton, C. R. Abernathy and F. Ren, Applied Physics Letters 64, 3643-3645 (1994).                                           

151.    "Ar⁺ -Ion Milling Characteristics of III-V Nitrides," S. J. Pearton, C. R. Abernathy and F. Ren and J. Lothian, Journal of Applied Physics 76, 1210-1214 (1994).

152.    "Effect of Substrate Temperature on Dry Etching of InP, GaAs and A1GaAs in I₂ and Br₂ Plasmas," U. K. Chakrabarti, F. Ren, S. J. Pearton and C. R. Abernathy, Journal of Vacuum Science and Technology A 12, 1129-1134 (1994).

153.    "Low Resistance Ohmic Contacts on N⁺ Ion Bombarded InP," F. Ren, S. J. Pearton, J. Lothian, W. Chu. R. G. Wilson, C. R. Abernathy and S. S. Pei, Applied Physics Letters 65, 2165-2167 (1994). 

154.    "The Impact of Impurity Incorporation on HBTs Grown by MOMBE," C. R.  Abernathy, F. Ren, S. J. Pearton, P. Wisk, D. Bohling, G. Muhr, A. C. Jones, M. Stavola and D. Kozuch, Journal of Crystal Growth 136, 11-17 (1994).

155.    "Structural Characterization of GaN and GaAsN Grown by ECR-MOMBE," S. Bharatan, K. S. Jones, C. R. Abernathy, S. J. Pearton, F. Ren, P. Wisk and J. Lothian, Journal of Vacuum Science and Technology A 12, 1094-1098 (1994).

156.    "InP-based Single HBTs with Improved Breakdown Characteristics," F. Ren, C. R. Abernathy, S. J. Pearton and P. Wisk, Electronics Letters  30, 1184-1185 (1994).

157.    "Low Temperature Dry Etching of Tungsten metal, Dielectric and Trilevel Resist Layers on GaAs,” S. J. Pearton, C. R. Abernathy, F. Ren, J. Lothian and R. Kopf, Plasma Chemistry and Plasma Processing, 14, 505-514 (1994).

158.    "Dopant Passivation Occurring During ECR CH₄/H₂ Dry Etching of InGaAs/AlInAs HEMTs," F. Ren, A. Cho., J. Kuo, S.J. Pearton,  J. Coblian, D. Sivco, R.G. Wilson and Y.K. Chen, Electronics Letters 31, 406-407 (1995).

159.    "High Efficiency Microwave Power AlGaAs/InGaAs of HEMTs Fabricated by Dry Etch Single Gate Recess," C.S. Wu, F. Ren, S.J. Pearton, M. Hu, C.K. Puo and R.F. Wang, IEEE Trans. Electronic Devices 42, 1419-1425 (1995).

160.    "Novel Fabrication of Self-Aligned GaAs/AlGaAs and GaAs/InGaP Microwave Power HBTs," F. Ren, C.R. Abernathy, S.J. Pearton, L.W. Yang and S.T. Tu, Solid State Electronics 38, 1635-1639 (1995).

161.     "Comparison of H⁺ and He⁺ Implant Isolation of GaAs Based HBTs," S. J. Pearton, C. R. Abernathy, J. W. Lee, F. Ren and C. S. Wu, Journal of Vacuum Science and Technology B 13, 15-21 (1995).

162.    "Use of InN for Ohmic Contacts on GaAs/AlGaAs HBTs," F. Ren, C. R. Abernathy, S. N. G. Chu, J. R. Coblisan and S. J. Pearton, Applied Physics Letters 66, 1503-1505 (1995). 

163.    "Thermal Stability of Deuterium in InAlN and InGaAlN," S. J. Pearton, C. R. Abernathy, J. D. MacKenzie, R. G. Wilson, F. Ren and J. M. Zavada, Electronics Letters 31, 327-329 (1995).

164.    "Effect of Ion Energy on Hydrogen Diffusion in n- and p-type GaAs,” S. J. Pearton, C. R. Abernathy, R. G. Wilson, F. Ren, and J. M. Zavada, Electronics Letters 31, 496-497 (1995). 

165.    "Use of Ti in Ohmic Metal Contacts to p-GaAs,” F. Ren, S. J. Pearton, C. R. Abernathy, and J. R. Lothian, Journal of Vacuum Science and Technology B 13, 863-866 (1995). 

166.    "The Role of Hydrogen in Current-Induced Degradation of C-Doped GaAs/AlGaAs HBTs," F. Ren, C.R. Abernathy, S. Chu, J. Coblisan and S.J. Pearton, Solid State Electronics 38, 1137-1140 (1995).

167.    "Wet Chemical Etching in Al_0.5In_0.5P," J.W. Lee, S.J. Pearton, C.R. Abernathy, E. Hobson, F. Ren and C.S. Wu, Journal of Electrochemical Society 142, 100-103 (1995).

168.    "Nanoscale Structures in III-V Semiconductors Using Sidewall Masking and High Ion Density Dry Etching," F. Ren, S.J. Pearton, C.R. Abernathy and J. Collian, Journal of Vacuum Science and Technology A 13, 753-756 (1995).

169.    "High Density, Low Temperature Dry Etching in  GaAs and InP Device Technology," S.J. Pearton, C.R. Abernathy and F. Ren, Journal of Vacuum Science and Technology A 13, 849-853 (1995).

170.    “SiN Encapsulation of Sulfide Passivated GaAs/AlGaAs Microdisk Lasers," W.S. Hobson, F. Ren, R. Slusher and S.J. Pearton, Journal of Vacuum Science and Technology A 13, 642-645 (1995).

171.    "Investigation of Wet Etching Solutions for InGaP," J.W. Lee, S.J. Pearton, C.R. Abernathy, W. Hobson, F. Ren and C.S. Wu, Solid State Electronics 38, 1871-1875 (1995).

172.    "Effect of ECR Plasma in the Luminescence Efficiency of InGaAs and InP," F. Ren, D. Buckley, K. Lee, S.J. Pearton, C. Constantine, W.S. Hobson, R.A. Hamm and P.C. Chao, Solid State Electronics 38, 2011-2014 (1995).

173.    "High Rate Dry Etching of InGaP In BCl₃ Plasma Chemistries," F. Ren, W.S. Hobson, J.R. Lothian, J. Lopata, J. Caballero, S.J. Pearton and M. Cole, Applied Physics Letters 67, 2497-2499 (1995).

174.    "Damage Introduction in InGaP by ECR Ar Plasmas," J.W. Lee, S.J. Pearton, C.R. Abernathy, W.S. Hobson and F. Ren, Applied Physics Letters 67, 3289-3291 (1995).

175.    “Silicon nitride encapsulation of sulfide passivated GaAs/AlGaAs microdisk lasers”, Hobson, W. S., Ren, F., Mohideen, U., Slusher, R. E., and  Schnoes, M. L., J. Vac. Sci. Technol., A 12, 642-646 (1995).

176.    “Optical Emission End Point Detection for Via Hole in InP and GaAs Power Device Structures.” S.J. Pearton, F. Ren, C.R. Abernathy, and C. Constantine, Materials Science & Engineering B23 36-40 (1996).

177.    “Patterning of Cu, Co, Fe, and Ag for magnetic nanostructures.” K.B. Jung, J.W. Lee, Y.D. Park, J.A. Caballero, J.R. Childress, and S.J. Pearton. pp.1780-1784

178.    “Comparison of Dry Etching Techniques for III-V Semiconductors in CH₄/H₂/Ar Plasmas,” S.J. Pearton, J.W. Lee, E.S. Lambers, C.R. Abernathy, F. Ren, W.S. Hobson and R.J. Shul, Journal of Electrochemical Society 143, 752-757 (1996).

179.    “ Wet Chemical Etch Solutions for AI_xGa_1-xP” J.W. Lee, C.J. Santana, C.R. Abernathy S.J. Pearton and F. Ren, Soli State Electronics, 39, 547-550(1996)

180.    “Process Development for III-V Nitrides.” S.J. Pearton, C.R. Abernathy, F. Ren, R.J. Shul, S.P. Kilcoyne, M. Hagerott-Crawford, J.C. Zolper, R.G. Wilson, R.G. Schwartz, J.M. Zavada, Materials Science & Engineering B36 138-146 (1996)

181.    “Passivation of Carbon Doping InGaAs During ECR-CVD of SiN.” F. Ren, R.A. Hamm, and J.R. Lothian, Solid-State Electronics Vol. 39, No. 5., 763-765 (1996).

182.    “Electron Cylotron Resonance Plasma Etching of InP and Related Materials in BCI3.”   F. Ren, W.S. Hobson, J.M. Kuo, J.R. Lothian, J. Lopata, S.J. Pearton, and J.A. Caballero, Solid-State Electronics Vol 39., No. 5, 696-698 (1996)

183.    “High Microwave Power ECR Etching of III-V Semiconductors in CH₄/H₂/Ar,” S.J. Pearton, J.W. Lee,  E.S. Lambers, J.R. Mileham, C.R. Abernathy, F. Ren, W.S. Hobson and R.J. Shul, Journal of Vacuum Science and Technology B 14, 118-124 (1996).

184.    “High Ion Density Plasma Etching of InGaP, AlInP and AlGaP in CH₄/H₂/Ar,” J.W. Lee, S.J. Pearton, C. Santana, J.R. Mileham, E.S. Lambers, C.R. Abernathy, F. Ren and W.S. Hobson, Journal of Electrochemical Society 143, 1093-1099 (1996).

185.    “ECR Etching of InP and Related Materials in BCl₃,” F. Ren, W.S. Hobson, J.M. Kuo, J.R. Lothian, J. Lopata, S.J. Pearton and J.A.Caballero, Solid State Electronics 39, 695-699 (1996).

186.    “Passivation of C Doping in InGaAs During ECR-CVD of SiN,” F. Ren, R. Hamm, J. Lothian, R.G. Wilson and S.J. Pearton, Solid State Electronics 38, 263-265 (1996).

187.    “A Surface Modification Study of InGaP Etched with an ECR Source at Variable Powers,” M.W. Cole, W. Han, R. Pfeffer, F. Ren, W. Hobson, J. Lothian, J. Caballero and S.J. Pearton, Journal of Applied Physics 79, 3286-3288 (1996).

188.    “The Incorporation of H into III-V Nitrides During Processing,” S.J. Pearton, R.J. Shul, R.G. Wilson, F. Ren, J. Zavada, C.R. Abernathy, C. Vartuli, J.W.Lee, J.R. Mileham and J.D. MacKenzie, Journal of Electronic Materials 25, 845-848 (1996).

189.    “Cl₂-based Dry Etching of GaAs, AlGaAs and GaP,” J.W. Lee, J. Hong, E.S. Lambers, C.R. Abernathy, S.J. Pearton, W.S. Hobson and F. Ren, Journal of Electrochemical Society 143, 2010-2016 (1996).

190.    “Dry Etching of InGaP and AlInP in CH₄/H₂/Ar,” J.W. Lee, S.J. Pearton, C. Santana, E. Lambers, C.R. Abernathy, W.S. Hobson and F. Ren, Plasma Chemistry and Plasma Processing 16, 365-382 (1996).

191.    “Effect of BCl₃ Dry Etching on InAlN Surface Properties,” F. Ren, J. Lothian, Y.K. Chen, J.D. MacKenzie, S.M. Donovan, C.B. Vartuli, CR. Abernathy, J.W. Lee and S.J. Pearton, Journal of Electrochemical Society 143, L217-L219 (1996).

192.    “Dry Etching of InGaAlP Alloys in Cl₂/Ar High Ion Density Plasmas,” J. Hong, J.W. Lee, E.S. Lambers, C.R. Abernathy, C. Santana, S.J. Pearton, W.S. Hobson and R. Ren, Journal of Electronic Materials 25, 1428-1433 (1996).

193.    “Comparison of BCl₃/Ar and BCl₃/N₂ Plasma Chemistries for Dry Etching of InGaAI..” F. Ren, J.R. Lothian, J.M. Kuo, W.S. Hobson, J. Lopata, J.A. Caballero, S.J. Pearton, and M.W. Cole, J. Vac. Sci. Technol. B 14(3) 1758-1763 (1996).

194.    P Alloys,” J. Hong, J.W. Lee, C.J. Santana, C.R. Abernathy, S.J. Pearton, W.S. Hobson and F. Ren, Semiconductor Science and Technology 11, 1218-1223 (1996).

195.    “Cl₂/Ar Plasma Etching of Binary, Ternary and Quaternary In-based Compound Semiconductors,” J.W. Lee, J. Hong, C.R. Abernathy, E.S. Lambers, S.J. Pearton, W.S. Hobson and F. Ren, Journal of Vacuum Science and Technology B 14, 2567-2574 (1996).

196.    “Microstructural Stability of Ohmic Contacts to In_xGa_1-xN,” A. Durbha, S.J. Pearton, C.R. Abernathy, J.W. Lee, P.H. Holloway and F. Ren, Journal of Vacuum Science and Technology B 14, 2582-2586 (1996).

197.    “Passivation of Dopants in InGaP using ECR Hydrogenation,” J.W. Lee, S.J. Pearton, C.R. Abernathy, W.S. Hobson and F. Ren, Materials Science and Engineering B38, 263-267 (1996).

198.    “Reactivation of Acceptors and Trapping of Hydrogen in GaN/InGaN Double Heterostructures,” S.J. Pearton, S. Bendi, K.S. Jones, V. Krishnamoorthy, R.G. Wilson, F. Ren, R. Karlicek and R.A. Stall, Applied Physics Letters 69, 1879-1881 (1996).

199.    “Effect of Ar Addition in ECR Ch₄/H₂/Ar Plasma Etching of GaAs, InP and InGaP,” J.W. Lee, S.J. Pearton, C.R. Abernathy, W.S. Hobson and F. Ren, Solid State Electronics 39, 1095-1097 (1996).

200.    “Comparison of Dry Etching Techniques for InGaP, AlInP and AlGaP,” J. Hong, J.W. Lee, C. Santana, C.R. Abernathy, E.S. Lambers, S.J. Pearton, W.S. Hobson and F. Ren, Solid State Electronics 39, 1109-1111 (1996).

201.    “Extremely High Etch Rate of In-based III-V Semiconductors in BCl₃/N₂ Based Plasma,” F. Ren, W.S. Hobson, J.R. Lothian, J. Lopata, S.J. Pearton, J.A. Caballero and M.W. Cole, Journal of Electrochemical Society 143, 3394-3397 (1996).

202.    “Wet Chemical Etching of AlN and InAlN in KOH Solutions,” C.B. Vartuli, S.J. Pearton, J.W. Lee, C.R. Abernathy, J.D. MacKenzie, J.C. Zolper, R.J. Shul and F. Ren, Journal of Electrochemical Society 143, 3681-3685 (1996).

203.    “Thermal Stability of Hydrogen in LiAlO₂ and LiGaO₂,” R.G. Wilson, B.L. H. Chai, S.J. Pearton, C.R. Abernathy, F. Ren and J.M. Zavada, Applied Physics Letters 69 3848-3850 (1996).

204.    “Unintentional Hydrogenation of GaN and Related alloys During Processing,” S.J. Pearton, C.R. Abernathy, C. Vartuli, J. Lee, J. MacKenzie, R.G. Wilson, R. Shul, F. Ren and J. Zavada, Journal of Vacuum Science and Technology A14, 831-836 (1996).

205.    “Plasma Etching of InGaP, AlInP and AlGaP in BCl₃ Environment,” J. Hong, J. Lee, C. Santana, C.R. Abernathy, S.J. Pearton, W.S. Hobson and F. Ren, Materials Science and Engineering B41, 247-253 (1996).

206.    “A surface modification study of InGaP etched with an electron cyclotron resonance source at variable microwave powers,” Cole MW, Han WY, Pfeffer RL, Eckart DW, Ren F, Hobson WS, Lothian JR, Lopata J, Caballero JA, Pearton SJ., J. Appl. Phys., 79: (6) 3286-3289 ( 1996).

207.    "Unintentional Hydrogenation of GaN and Related Alloys During Processing,” S.J. Pearton, C.R. Abernathy, C.B. Vartuli, J.W. Lee, J.D. MacKenzie, R.G. Wilson, R.J. Shul, F. Ren and J.M. Zavada, Journal of Vacuum Science and Technology A 14, 831-835 (1996).

208.    "Effect of Ar Addition in ECR CH₄/H₂/Ar Plasma Etching of GaAs, InP and InGaP,” J.W. Lee, S.J. Pearton, C.R. Abernathy, W.S. Hobson and F. Ren, Solid State Electronics 39, 1095-1097 (1996).

209.    “Photoluminescence and x-ray photoelectron spectroscopy study of S-passivation InGaAs(001)” Geelhaar, L., Bartynski, R. A., Ren, F., Schnoes, M., and Buckley, D., N., J. Appl. Phys., 80, 3076(1996).

210.    “Thermodynamic and photochemical stability of low interface state density Ga₂O₃-GaAs structure fabricated by in situ molecular beam epitaxy,” Passlack, M., Hong, M. W., Mannaerts, J. P., Opila, R. L., and Ren, F., Appl. Phys., Lett., 69, 302(1996).

211.    “Mid-IR interband cascade electroluminescence in type-II quantum wells,” Yang RQ, Lin CH, Chang PC, Murry SJ, Zhang D, Pei SS, Kurtz SR, Chu AN, Ren F., Electron. Lett., 32: (17) 1621-1622 (1996).

212.    “Thermal stability of W ohmic contacts to n-type GaN,” Cole MW, Eckart DW, Han WY, Pfeffer RL, Monahan T, Ren F, Yuan C, Stall RA, Pearton SJ, Li Y, Lu Y., J. App. Phys. 80: (1) 278-281 (1996).

_213.         “A Structural and Chemical Investigation of WSi_x Ohmic Contacts to n⁺GaN,” M. Cole, D. Eckert, W. Han, F. Ren and S.J. Pearton, Electrochemical Society Proceedings Vol. 96-15, 271-276 (1996).

214.    “Effect of Dry Etching on III-Nitride Surface Properties,” F. Ren, S.J. Pearton, C.R. Abernathy, C. Vartuli and R.G. Wilson, Electrochemical Society Proceedings Vol. 96-15, 289-295 (1996).

_215.         “BCI₃/N₂ Dry Etching of InP, InAIP, and InGaP.” F. Ren, J.R. Lothian, J.M. Kuo, W.S. Hobson, J. Lopata, J.A. Caballero, S.J. Pearton, M.W. Cole. 

_216.         "Comparison of Dry Etching Techniques for InGaP, AlInP and AlGaP,” J. Hong, J.W. Lee, C. Santana, C.R. Abernathy, E. Lambers, S.J. Pearton, W.S. Hobson and F. Ren, Solid State Electronics 39, 1109-1112 (1996).