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Fan Ren
Charles A. Stokes Professor
| Email: |
ren@che.ufl.edu |
| Phone: |
(352)
392-4727 |
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317 Chemical Engineering Building |
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Resume,
Patents,
Publications,
Research Details,
Equipment,
Former Group Members,
Research Group
Patents
- “GaN-type enhancement MOSFET using heterostructure”,
Abernathy, Irokawa, Pearton, Ren, US 6,914,273 (2005).
- "Air Isolated Crossovers",
Kossives, Tai, Ren, US 6,683,384(2004).
- "Method of Making An Article Comprising An Oxide Layer on A GaAs-Based Semiconductor Body",
Chen, Cho, Hong, Hobson, Kuo, Kwo, Murphy, Ren, US 6,271,0698(2001).
- "Method of Forming A T-Shape Gate",
Lothian, Ren, Weiner, US 5,981,319(1999).
- "Article Comprising An Oxide Layer on GaN",
Hong, Hobson, Lothian, Mannaerts, Ren, US 5,912,498(1999).
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"GaAs Based MOSFET, And Method of Making Same",
Cho, Hong, Hobson, Mannaerts, Ren, US 5,903,037(1999).
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"Method of making an article comprising an oxide layer on a GaAs-based semiconductor body",,
Hong, Hobson, Lothian, Mannaerts, Ren, European 993055128(1999).
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"Method of making an article comprising an oxide layer on a GaAs-based semiconductor body",
Hong, Hobson, Lothian, Mannaerts, Ren, European 993055128(1999)
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"Improved Air Isolation Crossovers",
Kossives, Tai, Ren, European 98307916(1998).
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"Article Comprising An Oxide Layer on GaN and Method of Making the Article",
Hobson, Hong, Lothian, Mannaerts, Ren, European, 98307928(1998).
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"Manufacture of Field Effect Transistors",
Lothian, Ren, European 98307228(1998).
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"GaAs Based MOSFET,"
Cho, Hong, Lothian, Mannaerts, Ren, European 98301154(1998).
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"Article Comprising A Gallium Oxide Layer on A GaAs-Based Semiconductor and
Method of Making The Article",
Hong, Ren, US 5,821,171(1998).
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"Method of Depositing Thin Passivating Film on Micro-Miniature Semiconductor
Device",
Lin, Lothian, and Ren, US 5,620,909(1997).
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"Method of Making A GaAs Based Laser Comprising A Facet Coating",
Chakrabarti, Hobson, Ren, and Schnoes, US 5,668,049(1997).
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"Method for Making In-Containing III/V Semiconductor Devices,"
Hobson, Lopata, and Ren, US 5,527,425(1996).
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"Method for Making In-Containing III/V Semiconductor Devices,"
Hobson, Lopata, and Ren, European 96305099: (1996).
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"Method for Selectively Growing Aluminum-Containing Layers,"
Abernathy, Pearton, and Ren, US 5,4569,097(1995).
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"Method for Making Fine-line Semiconductor Devices,"
Abernathy, Lothian, Pearton and Ren, European Patent 94301125 (1994).
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"Method for Forming Patterned W Layers,"
Fullowan, Pearton and Ren, U.S. 5,176 792(1993) European Patent 92309607.
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"Method for Selectively Growing Ga-containing Layers,"
Abernathy, Pearton, Ren and Wisk, U.S. Patent 5,227 006(1993).
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"Method for Selectively Growing Ga-containing Layers,"
Abernathy, Pearton, Ren and Wisk, European Patent 92310488(1993).
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"Method for Selectively Growing Al-containing Layers,"
Abernathy, Pearton, Ren and Wisk: U.S. Patent 5,459 097(1993).
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"Method for Selectively Growing Al-containing Layers,"
Abernathy, Pearton, Ren and Wisk: European Patent 92310487 (1993).
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"Method of Makinf Semiconductor Devices,"
Fullowan, Pearton and Ren, U.S. 5, 168 071(1992).
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"Fabrication of Al-containing Semiconductor Devices,"
Abernathy, Hobson, Jordan, Pearton and Ren: European Patent 92301438 (1992).
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"GaAs MESFETs with Enhanced Schottky Barrier,"
Emerson and Ren, US 5,106,771 (1992).
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"GaAs Device Fabrication Utilizing Metalorganic Molecular Beam Epitaxy,"
Abernathy and Ren, US 5,171,704: (1992).
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"Method for Forming Patterned W Layers,"
Fullowan, Pearton and Ren, European Patent 92309607(1992).
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"Method for Selectively Wet Etching Aluminum Gallium Arsenide,"
Ren and Shah, US 4,949,540 (1991).
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