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Fan Ren Charles A. Stokes Professor Semiconductor Materials and Devices Email: ren@che.ufl.edu Phone: (352) 392-4727 317 Chemical Engineering Building

Fan Ren

Charles A. Stokes Professor, Department of Chemical Engineering, University of Florida

Adjunct Professor, Materials Science and Engineering, University of Florida

Education

1975 B.S. in Applied Chemistry, Fung Cha University, Taiwan

1978 M.S. in Chemical Engineering, National Cheng Kung University, Taiwan

1985 M.S. in Polymer Science and Engineering, Polytechnic Institute of Brooklyn, NY

1991 Ph.D. in Inorganic Chemistry, Polytechnic Institute of Brooklyn, NY

Research Interests

Processing and characterization of III-V and oxide based semiconductor materials and devices for high-speed electronic and photonic devices as well as sensors.

Professional Society

1. American Institute of Chemical Engineering (lifetime member)

2. American Vacuum Society (Fellow)

3. American Physics Society

4. Electrochemical Society (Fellow)

5. IEEE (senior member)

6. Materials Research Society

Key Technical Accomplishments

1987-1989: AlGaAs/GaAs heterostructure field effect transistor (HFET) development. (1 patent at AT&T Bell Labs) One of the key persons for process development for a variety of HFET and technology transfer to AT&T 3-inch pilot production line sponsored by DARPA and AT&T for computing, 2.5 Gbit/s fiber optic communications, and microwave communications applications. Technology later licensed and transferred to Triquint Semiconductor, where it enjoyed a long product life in wired and wireless applications until being displaced (1999) by higher performance pseudomorphic high electron mobility transistor (PHEMT) technology.

1989-1995: GaAs/AlGaAs heterojunction bipolar transistor with carbon doped base layer development. (4 patents at AT&T Bell Labs.) Led process team that developed high speed self-aligned processed AlGaAs/GaAs heterojunction bipolar transistor (HBT) technology with 40 GHz cut of frequency for 10Gb/s laser driver, frequency divider and transceiver for lightwave technology.

1991-1992: Demonstrated multiple metal stack for patterning tungsten (W) and tungsten silicide (WSix). (1 patent at AT&T Bell Labs) Use a sacrificial metal layer as the mask in the chlorine based plasma to etch the tungsten based metallization to prevent undercut. Submicron features of W metal were demonstrated.

1992-1993: InGaP/GaAs heterojunction bipolar transistor with carbon doped base layer development. (1 patent at AT&T Bell Labs) Demonstrated the first InGaP/GaAs HBT with carbon doped base layer. Base dopant diffusion was the bottleneck of the AlGaAs/GaAs HBT technology. Due to the natural of carbon doping in InGaP is amphoteric. P-n junction at the InGaP/GaAs is electrically abrupt. This technology solved the based dopant diffusion problem in the GaAs HBT technology. This InGaP/GaAs HBTs are currently widely used in the manufacture for the wireless power amplifier application.

1995-1997: Using electron cyclotron resonance (ECR) system developed etching and passivation techniques for compound semiconductor device fabrication. (3 patents at Lucent Bell Labs) Developed extremely high etch rate for the applications of deep mesa or via hole formation of In-based semiconductor by alternating the plasma chemistry. Developed a conformable dielectric deposition to passivate the submicron high electron mobility transistors (HEMTs) without degrading the high frequency performance of the devices. Developed an in-situ hydrogen sulfide passivation for the laser facet passivation to improve laser reliability.

1996-1999: Demonstrated the first GaAs metal oxide semiconductor field effect transistor (MOSFET) and p- as well as n-channel MSFET with gallium gadolinium oxide as the gate oxide for the low power application. (4 patents at Lucent Bell Labs, work was presented in the 1996 GaAs IC Symposium as a plenary invited talk and 1997 IEDM late news paper)

1998-2000: Developed high voltage GaN and AlGaN based rectifiers with first reported record breakdown greater than 9000 V for possible high voltage power applications. One of the first demonstrated GaN/AlGaN HBTs (MRS Internet J. Nitride Semicon. Res. 3 41 1998)

2000-2002: Demonstrate the first GaN based MOSFET and first reported inversion channel observed in the GaN material system.(presented in the 2002 Device Research Conference as a late new paper and 1 patent at University of Florida)

2003-2004: Developed GaN Schottky diode and high electron mobility transistor based hydrogen gas sensor, which showed detection-limit around 10 ppm and response time two order better than the conventional resistive based sensor.

2004-2007: Developed GaN/AlGaN based high electron mobility transistor based bio- and chemical sensors, which can be used to detect prostate cancer, kidney injury molecule, protein, DNA, pH value in the breath, block copolymer and heavy metal ions. (4 patent applications are preparing for University of Florida)

Books

1. Topics in Growth and Device Processing of III-V Semiconductors, S.J. Pearton, C.R. Abernathy and F. Ren (World Scientific, New York, 1996).

2. Wide Energy Bandgap Electronic Devices, F. Ren and J.C. Zolper(World Scientific, New York, 2003).

3. GaN Processing for Electronics, Sensors and Spintronics, S.J.Pearton, F.Ren and C.R.Abernathy(Springer,NY,2005).

Book Chapters

1. "Sources of Hydrogen in III-V Device Processing," in Hydrogen in Compound Semiconductors, S.J. Pearton, ed. F. Ren, Trans-Tech Pub., Switzerland, 1994.

2. "Contacts on III-Nitrides," in GaN and Related Materials, S.J. Pearton ed. F. Ren, Gordon and Breach, New York, 1996.

3. "Heterojunction Bipolar Transistors Processing and Device," in Processing Technology for Semiconductors, S.J. Pearton ed. F. Ren, Research Signpost, 1997.

4. "Novel Device Applications for III-V Nitrides," in GaN and Related Materials II, S.J. Pearton ed. F. Ren and C. R. Abernathy, Gordon and Breach, New York, 1998.

5. "GaN and AlGaN High Voltage Power Rectifiers,” A. Zhang, F. Ren, J. Han, S.J. Pearton, S. Reuh, Y.J. Park and J.-I. Chyi, in GaN Electronics, ed. F. Ren and J.C. Zolper, World Scientific, Singapore, 2002.

6. "Dilute Magnetic GaN, SiC and Related Semiconductors,” J. Kim, F. Ren, S.J. Pearton, M.E. Overberg, G. Thaler and Y.D. Park, in GaN and SiC Electronics, ed. F. Ren and J.C. Zolper (World Scientific, Singapore 2003).

7. “Design and Fabrication of GaN High Power Rectifiers’,K.Baik, Y.Irokawa, F.Ren, S.J.Pearton, S.S.Park and S.K.Lee, in III-Nitride Handbook, ed. M. Razeghi and M. Henini (Elsevier, London, 2004).

8. "Nanometer Thick Insulators for GaN Electronics”, S.J.Pearton, B.Gila, F.Ren and C.R.Abernathy, in Encyclopedia of Nanoscience and Nanotechnology, ed. H.S. Nalwa (American Scientific Publishers, Stevenson Ranch, CA (2004).

9. "ZnO Nanowires”,Y.W..Heo, S.J.Pearton, D.P.Norton and F.Ren, in Encyclopedia of Nanoscience and Nanotechnology, ed. H.S. Nalwa, American Scientific Publishers, Stevenson Ranch, CA (2004).

10. "Wide Bandgap Semiconductor Nanowires and Devices”,S.J. Pearton, B.S. Kang, D.P. Norton, F. Ren, Young-Woo Heo,Chih-Yang Chang,Gou-Chung Chi,Wei-Ming Wang and Li-Chyong Chen,in Physics,Chemistry and Applications of Doped Nano Materials, ed. H.S.Nalwa (American Scientific Publishers, Stevenson Ranch, CA (2006).

11. "Advances in ZnO Processing”, K.Ip, S.J. Pearton,D.P.Norton and F.Ren, in ZnO Bulk,Thin Films and Nanostructures:Processing ,Properties and Devices, ed. C.Jagadish and S.J.Pearton(Elsevier,Oxford,2006).

Proceedings Volumes

1. Large Area Wafer Growth and Processing for Electronic and Phonic Devices, ed. D. N. Buckley, S. A. Ringel, and F. Ren, (Electrochemical Society, Pennington, NJ 1994), Vol. 94-18, 324 pages.

2. Proc. 25th State-of-the-Art Program On Semiconductors, ed. S. N. G. Chu, V. Malhotra, F. Ren, P. Van Daele, and T. Mishima, (Electrochem. Soc., Pennington, NJ 1994) Vol. 94-34, 304 pages.

3. Compound Semiconductor Electronics and Photonics, ed. R.J. Shul, S.J. Pearton, F. Ren and C.S. Wu, Mat. Res. Soc. Symp. Proc., Vol. 421 (1996).

4. Wide Bandgap Semiconductors and 23rd State-of-the-Art Program on Compound Semiconductors, ed. F. Ren, S.J. Pearton, G.C. Chi, D.N. Buckley, P. van Duele and T. Kamijoh (Electrochem. Soc., Pennington, NJ 1995), Vol. 95-21.

5. Proc. 24th State –of-the-Art Program on Semiconductors, ed. F. Ren, S.J. Pearton, S. Chu, R. Shul and T. Kamijoh, (Electrochem. Soc., Pennington, NJ 1996), Vol. 96-2.

6. High Speed III-V Electronics, ed. F. Ren, C.S. Wu, S. Chu and S.J. Pearton, (Electrochem. Soc., Pennington, NJ 1996), Vol. 96-15.

7. Power Semiconductor Material and Device, ed, S. J. Pearton, R. J. Shul, E. Wolfgang, F. Ren, and S. Tenconi, Material Research Society Symposium Proceedings Vol. 483 (1997), 456 pages.

8. III-V Nitride Materials and Process II, ed. C. R. Abernathy, W. D. Brown, D. N. Buckley, J. P. Dismukes, M. Kamp, T. D. Moustakas, S. J. Pearton, and F. Ren, (Electrochemical Society, Pennington, NJ 1997), Vol. 97-34, 294 pages.

9. Compound Semiconductor Power Transistors and State-of-the-Art Program on Compound Semiconductors, ed. F. Ren, D. Buckley, SA. Chu, J.C. Zolper, C.R. Abernathy, S.J. Pearton and J. Pursey (Electrochem. Soc., Pennington, NJ 1998), Vol. 98-12.

10. Light Emitting Devices for Opotelectronic Applications and The 28th State-of-the-Art Program On Semiconductors, ed. H. Q. Hou, R. E, Sah, S. J. Pearton, F. Ren, K. Wada, (Electrochem. Soc., Pennington, NJ 1998) Vol. 98-2, 641 pages.

11. III-Nitride-Based Semiconductor Electronics and Optical Devices, ed. F. Ren, D.N. Buckley, S.N.G. Chu and S.J. Pearton, ECS Proc. 2001-1 (ECS, Pennington, NJ 2001).

12. Wide Bandgap Semiconductors for Photonic and Electronic Devices and Sensors II, ed. R. Kopf, F. Ren, E. Stokes, H. Ng, A.G. Baca, S.J. Pearton and S.N.G. Chu, ECS Proc. 2002-2 (ECS, Pennington, NJ, 2002).

13. State-of-The-Art Program on Compound Semiconductors XXXVIII and Wide Bandgap Semiconductor for Photontic and Electronic Devices and Sensors III, ed. E.B.Stokes, R.C.Fitch, Jr., D.N.Buckley, P.C.Chang, D.W.Merfeld and F. Ren, (Electrochem. Soc., Pennington, NJ 2003), Vol. 2003-04.

14. State-of-The-Art Program on Compound Semiconductors XXXIX and Nitride Wide Bandgap Semiconductor for Sensors, Photontic and Electronics IV, ed. R.F.Kopf, A.G.Baca, S.J.Pearton and F. Ren, (Electrochem. Soc., Pennington, NJ 2003), Vol. 2003-11.

15. State-of-The-Art Program on Compound Semiconductors XLIII and Nitride Wide Bandgap Semiconductor for Sensors, Photontic and Electronics VI, ed. J.J. Wang, R.C.Fitch and F. Ren, (Electrochem. Soc., Pennington, NJ 2005), Vol. 1, No.2.

16. State-of-The-Art Program on Compound Semiconductors 45 and Wide Bandgap Semiconductor for Materials And Devices 7, ed. F. Ren, E. B. Stokes, J. A. Bardwell, P.C. Chang, W. Johnson and P. H. Shen (Electrochem. Soc., Pennington, NJ 2006), Vol. 3, No.5.

Miscellaneous

1. Treasurer: Electronics and Photonics Division in the Electrochemical Society (ECS) (2007-present).

2. Chair of the Electronics and Photonics Division Sudent Travel Grant committee in the Electrochemical Society (2002-present).

3. Committee Member: State-of-the-art Compound Semiconductor Committee in ECS(1995-present).

4. Committee Member: Norman Hackerman Young Author Award in the Electrochemical Society(1996-1997).

5. Chair of the Norman Hackerman Young Author Award committee in the Electrochemical Society (1998-2000).

6. Committee Member: Electronics and Photonics Division in the Electrochemical Society (ECS) (1998-present).

7. Serve as the member of Editorial Board of Solid State Electronics (1995-present).

8. Serve as the member of Editorial Board Materials Research Society Internet Nitride Journal (1996-present).

9. Committee Member: Electronic Materials And Processing Division in the American Vacuum Science Society(2006-present).

10. Co-Advisor of American Vacuum Science Society Student Chapter in the University of Florida(2006-present).

11. Serve as the Editor of Internet Nitride Journal (2001-2004).

12. Co-Organizer, SOTAPOCS in 186th Electrochemical Society Meeting, Miami Beach, FL (October 1994).

13. Co-Organizer, Symposium in 185th Electrochemical Society Meeting, San Francisco, CA (May 1994).

14. Co-Organizer, SOTAPOCS, in 187th Electrochemical Society Meeting, Reno, NV (Spring 1995).

15. Organizer, Wide Bandgap Semiconductors and Devices Symposium in 187th Electrochemical Society Meeting, Chicago, IL (Fall 1995).

16. Organizer, SOTAPOCS in 190th Electrochemical Society Meeting, San Antonia, TX (Fall 1996).

17. Organizer, SOTAPOCS in 189th Electrochemical Society Meeting, Los Angles, CA Co-Organizer, Power Semiconductor Materials and Devices Symposium in Materials Research Society, San Francisco, CA (Spring 1996).

18. Co-Organizer, High Speed III-V Electronics for Wireless Application Symposium in 190th Electrochemical Society Meeting, San Antonia, TX (Fall 1996).

19. Co-Organizer, Compound Semiconductor Electronics and Photonics Symposium in Materials Research Society, Boston, MA (Fall 1997).

20. Co-Organizer, III-V Nitrides Materials and Processes, Pairs (Fall 1997).

21. Organizer, Semiconductor Light Emitting Devices for Optoelectronic Applications in 193th Electrochemical Society Meeting, San Diego, CA (Spring 1998).

22. Organizer, Compound Semiconductor Power Transistors in 193th Electrochemical Society Meeting, Boston, MA (Fall 1998).

23. Organizer, SiGe and III-V’s Symposium in Materials Research Society, Boston, MA(Fall 1998).

24. Co-Organizer, SOTAPOCS XXVIII in 193th Electrochemical Society Meeting, San Diego, CA (Spring 1998).

25. Co-Organizer, SOTAPOCS, 195th Electrochemical Society, Hawaii, US (Fall 1999).

26. Co-Organizer, SOTAPOCS, 196th Electrochemical Society, Toronto, Canada (Spring 2000).

27. Co-Organizer, Wide Bandgap Electronic Power Devices in Materials Research Society, San Francisco, CA(spring 2000).

28. Co-Organizer, SOTAPOCS, 196th Electrochemical Society, Toronto, Canada (Spring 2000).

29. Co-Organizer, Wide Energy Bandgap Electronic Power Devices in Materials Research Society, San Francisco, CA(spring 2000).

30. Organizer, III-Nitride Based Semiconductor Electronics And Optical Devices, Washington DC. (2001). In Electrochemical Society.

31. Co-Organizer, Compound Semiconductor Power Transistors II in Electrochemical Society, Toronto, Canada(spring 2001).

32. Organizer, Wide Bandgap Semiconductor for Photonic and Electronic Devices And Sensor II in Electrochemical Society, Philadelphia, PA (Spring 2002).

33. Co-Organizer, Thirty-Seventh State-of-the-art program on Compound Semiconductors in Electrochemical Society, Salt Lake City, UT (2002).

34. Co-Organizer, Wide Bandgap Semiconductor for Photonic and Electronic Devices And Sensor III, Paris, France (Spring 2003).

35. Co-Organizer, Fortyth State-of-the-art program on Compound Semiconductors, in Electrochemical Society, Los Angeles, CA (2005).

36. Organizer, Forty First State-of-the-art program on Compound Semiconductors, in Electrochemical Society, Cancun, Mexico (2006).

37. University of Florida Research Foundation Professor Award 2004.

38. Charles A. Stokes Professor 2006.